DIMENSION
Product No. | Size(mm) | Coating |
KGW- 301 | 5 x 5 x 15 | No coating |
KGW- 302 | 5 x 5 x 15 | AR/AR@450-800nm |
KGW- 303 | 5 x 5 x 30 | No coating |
KGW- 304 | 5 x 5 x 30 | AR/AR@450-800nm |
KGW- 305 | 5 x 5 x 45 | No coating |
KGW- 306 | 5 x 5 x 45 | AR/AR@450-800nm |
Potassium gadolinium tungstate (KGd(WO₄)₂) crystal has the characteristics of wide light transmission range, good thermal conductivity, high damage threshold, large Raman frequency shift coefficient, and high Raman gain. It is an excellent stimulated Raman laser crystal that can maintain high conversion efficiency and beam quality during Raman frequency conversion.
Product No. | Size(mm) | Coating |
KGW- 301 | 5 x 5 x 15 | No coating |
KGW- 302 | 5 x 5 x 15 | AR/AR@450-800nm |
KGW- 303 | 5 x 5 x 30 | No coating |
KGW- 304 | 5 x 5 x 30 | AR/AR@450-800nm |
KGW- 305 | 5 x 5 x 45 | No coating |
KGW- 306 | 5 x 5 x 45 | AR/AR@450-800nm |
Argument Name | Values and Ranges |
---|---|
Crystal structure | Monoclinic system |
Space group | C2/c |
Unit cell parameters (Å) | a=0.809 nm, b=1.043 nm, c=0.758 nm |
Transparency | 0.3~5 μm |
Density | 7.27 g/cm3 |
Mohs hardness | 4-5 Mohs |
Melting point | 1087 ℃ |
Phase transition temperature | 1031 ℃ |
Thermal conductivity | Ka=2.6 W/m/K Kb=3.8 W/m/K Kc=3.4 W/m/K |
Dephasing time | 2 ps |
DN/dt | Dnp/dt=-15.7 x 10¯⁶/K DNm/dt=-11.8 x 10¯⁶/K DNg/dt=-17.3 x 10¯⁶/K |
Argument Name | Values and Ranges |
---|---|
Directional | [010] |
Maximum length | 50 mm |
Dimensional tolerance | Diameter tolerance: ±0.1 mm Length tolerance: ±0.5 mm |
Effective aperture | Central 90% area |
Smoothness | 10/5 Refer to MIL-PRF-13830B standard |
Flatness | <λ/6 @ 633 nm |
Parallelism | 20″ |
Verticality | ≦15′ |
Coating | Film customization service available |
Quality warranty period | One year (normal use) |
Argument Name | Values and Ranges |
---|---|
Raman frequency shift | 767 cm¯¹ (p[gg]p) 901 cm¯¹ (p[mm]p) |
Raman linewidth | 6.4 cm¯¹ @767 cm¯¹ (p[gg]p) 5.4cm¯¹ @901 cm¯¹ (p[mm]p) |
Raman gain | 11 cm/GW @532 nm 3 cm/GW @1064 nm |
♦ Larger absorption bandwidth
♦ 3-4 times longer lifetime
♦ Higher storage capacity
♦ Foreign quantum defects
♦ Better suited for dispersed pumping
♦ No excited state absorption and upconversion, high photoconversion efficiency
♦ 1000 nm for high-resolution multiphoton excitation of fluorophores and bioimaging of third and second microscopy
♦ In vitro microscopy applications
♦ Generation of ultrashort high-power pulses
♦ Regenerative amplifiers
Sending...